ATT 3DB 20W N M/F 3GHZ

Signal Attenuation: Provides a fixed attenuation of 3 decibels (dB), resulting in moderate signal reduction.
Power Handling: Rated to handle up to 20 watts of input power, suitable for moderate to high power RF applications.
Frequency Range: Effective up to 3 gigahertz (GHz), covering a range of RF frequencies.
Connectors:
Type: N-type
Configuration: Male (M) on one end, Female (F) on the other end
Design: Engineered for reliable performance with minimal signal loss and effective attenuation.
Specifications:
Attenuation: 3 dB (decibels)
Maximum Power Handling: 20 watts (W)
Frequency Range: Up to 3 gigahertz (GHz)
Connectors:
Type: N-type
Configuration: Male (M) on one end, Female (F) on the other end
Impedance: Typically 50 ohms (Ω), ensuring proper impedance matching and minimizing reflections in RF systems.
Return Loss: Generally excellent, often better than 20 dB, ensuring minimal signal reflection and effective attenuation.
Temperature Range: Typically operates within a standard temperature range of -20°C to +75°C, though specific ranges may vary by manufacturer.
Construction: Made from high-quality materials to ensure durability and reliable performance in demanding RF applications.
Applications:
RF Testing: Ideal for laboratory and field testing setups where moderate attenuation and high power handling are needed to manage signal levels and protect equipment.
Signal Conditioning: Useful for adjusting and managing signal levels in RF applications requiring precise attenuation and handling of higher power.
Communication Systems: Helps in controlling signal levels in RF communication systems operating up to 3 GHz, ensuring proper system performance and protection from high-power signals.
Broadcasting: Suitable for broadcasting systems where moderate signal attenuation is necessary to maintain signal integrity and avoid overloading equipment.
The ATT 3DB 20W N M/F 3GHz attenuator is a versatile and reliable component designed for managing RF signal levels with moderate attenuation, while handling higher power levels effectively, making it suitable for various high-frequency and high-power RF applications.